Homoepitaxial n-core: P-shell gallium nitride nanowires: HVPE overgrowth on MBE nanowires

Nanotechnology

Volumn 22, Issue 46, 2011, Pages

  Sanders, Aric ^a   Blanchard, Paul ^a   Bertness, Kris ^a   Brubaker, Matthew ^a   Dodson, Christopher ^a   Harvey, Todd ^a   Herrero, Andrew ^a   Rourke, Devin ^a   Schlager, John ^a   Sanford, Norman ^a   Chiaramonti, Ann N ^a   Davydov, Albert ^a   Motayed, Abhishek ^a   Tsvetkov, Denis ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT CONTRAST; ELECTRICAL MEASUREMENT; GALLIUM NITRIDE NANOWIRES; HALIDE VAPOR PHASE EPITAXY; HOMOEPITAXIAL; HOMOEPITAXIAL GROWTH; MAGNESIUM DOPED GALLIUM NITRIDE; P-SHELL; P-TYPE; PHOTOLUMINESCENCE MEASUREMENTS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

DOPING (ADDITIVES); EPITAXIAL GROWTH; GALLIUM NITRIDE; MAGNESIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; SHELLS (STRUCTURES); X RAY DIFFRACTION;

ELECTRIC WIRE;

EID: 80155156135     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/46/465703     Document Type: Article

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