The influence of Mg doping on the nucleation of self-induced GaN nanowires

AIP Advances

Volumn 2, Issue 1, 2012, Pages

  Limbach, F ^a   Caterino, R ^b   Gotschke, T ^a   Stoica, T ^b   Calarco, R ^a   Geelhaar, L ^a   Riechert, H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; GALLIUM NITRIDE; III-V SEMICONDUCTORS; MAGNESIUM; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; NANOWIRES; NUCLEATION;

AREAL DENSITIES; LINE OF SIGHT; NANOWIRE COALESCENCES; NANOWIRE DEVICES; NUCLEATION ENERGY; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; QUADRUPOLE MASS SPECTROMETRY; VARIOUS SUBSTRATES;

NANOCATALYSTS;

EID: 84867938442     PISSN: None     EISSN: 21583226     Source Type: Journal    
DOI: 10.1063/1.3693394     Document Type: Article

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