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Volumn 23, Issue 36, 2012, Pages

Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires

(7) Herrero, Andrew M a Blanchard, Paul T a Sanders, Aric a Brubaker, Matt D a Sanford, Norman A a Roshko, Alexana a Bertness, Kris A a

a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION LAYER; CONTACT AREAS; CONTACT STRUCTURE; CURRENT-VOLTAGE MEASUREMENTS; DEVICE DEGRADATION; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; GAN NANOWIRES; I-V MEASUREMENTS; METAL FILM; METAL/OXIDE INTERFACE; MG-DOPING; MICROSTRUCTURE EVOLUTIONS; MORPHOLOGY AND COMPOSITION; NANOWIRE DEVICES; P-GAN FILMS; TEM ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY TEM; VOID FORMATION; WETTING BEHAVIOR; XRD;

ADHESION; ANNEALING; DEGRADATION; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM NITRIDE; METALLIC FILMS; MORPHOLOGY; NANOWIRES; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

INTERFACES (MATERIALS);

EID: 84865434370 PISSN: 09574484 EISSN: 13616528 Source Type: Journal
DOI: 10.1088/0957-4484/23/36/365203 Document Type: Article

Times cited : (3)

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