Nonvolatile memory performance improvements for solution-processed thin-film transistors with composition-modified In-Zn-Ti-O active channel and ferroelectric copolymer gate insulator

Organic Electronics

Volumn 14, Issue 9, 2013, Pages 2148-2157

  Bak, Jun Yong ^a   Jung, Soon Won ^b   Yoon, Sung Min ^a  

^a Kyung Hee University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Ferroelectric gate insulator; In Zn Ti O; Memory thin film transistor; Oxide semiconductor; P(VDF TrFE)

Indexed keywords

CARRIER CONCENTRATION; FERROELECTRIC DEVICES; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; FLUORINE COMPOUNDS; INDIUM COMPOUNDS; NONVOLATILE STORAGE; OXIDE SEMICONDUCTORS; POWER TRANSISTORS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM CIRCUITS; THIN FILMS; TITANIUM OXIDES; ZINC COMPOUNDS;

DEVICE PERFORMANCE; FERROELECTRIC COPOLYMERS; FERROELECTRIC GATE INSULATORS; MEMORY PERFORMANCE; NON-VOLATILE MEMORY; POLY(VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE); PVDF-TRFE; SOLUTION-PROCESSED;

THIN FILM TRANSISTORS;

EID: 84878519578     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2013.05.008     Document Type: Article

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