Origin of multiple memory states in organic ferroelectric field-effect transistors

Applied Physics Letters

Volumn 101, Issue 3, 2012, Pages

  Kam, Benjamin ^a,b   Li, Xiaoran ^c,d   Cristoferi, Claudio ^e   Smits, Edsger C P ^c   Mityashin, Alexander ^a,b   Schols, Sarah ^a   Genoe, Jan ^a   Gelinck, Gerwin ^c   Heremans, Paul ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c HOLST CENTRE   (Netherlands)

^d EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^e POLITECNICO DI TORINO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT TRANSISTORS; DEVICE OPERATIONS; ELECTRICAL CHARACTERIZATION; FERROELECTRIC FIELD EFFECT TRANSISTORS; FERROELECTRIC POLARIZATION; GATE VOLTAGES; MATERIAL COMBINATION; MEMORY STATE; PENTACENES; POLY(VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE); REPROGRAMMABLE; SCANNING KELVIN PROBE MICROSCOPY;

ORGANIC FIELD EFFECT TRANSISTORS; POLARIZATION;

FERROELECTRICITY;

EID: 84864270536     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4737176     Document Type: Article

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