Use of Si O 2 nanoparticles as etch mask to generate Si nanorods by reactive ion etch

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 2, 2006, Pages 599-603

  Liang, Eih Zhe ^a   Huang, Chao Jei ^a   Lin, Ching Fuh ^a,b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b Graduate Institute of Electronics Engineering   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DECANANOMETER SCALE; MICROWAVE-REFLECTANCE; REACTIVE ION ETCH (RIE);

ANISOTROPY; ETCHING; LIGHT REFLECTION; MICROWAVES; PHOTOCONDUCTIVITY; SILICA;

NANOSTRUCTURED MATERIALS;

EID: 33645519575     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2172251     Document Type: Article

References (21)

1. B. Y. Tsui and C. P. Lin, IEEE Electron Device Lett. 25, 430 (2004).
2. X. Huang, IEEE Trans. Electron Devices 48, 880 (2001).
3. H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, T. Ono, A. Fujiwara, and S. Horiguchi, J. Vac. Sci. Technol. B 21, 1 (2003).
4. Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase, IEEE Trans. Electron Devices 47, 147 (2000).
5. S. Lee, W. Cho, J. Woon, I. Han, C. Ki, J. Won, and J. I. Lee, Phys. Status Solidi C 1, 2767 (2004).
6. Z. Yaniv, L. Thuesen, D. Hutchins, and R. L. Fink, Proceedings 2002 SID Conference Record of the International Display Research Conference (France, 2002), p. 753-754.
7. K. Luterova, Opt. Mater. (Amsterdam, Neth.) 27, 750 (2005).
8. P. K. Kashkarov, L. A. Golovan, A. B. Fedotov, A. I Efimova, L. P. Kuznetsova, V. Y. Timoshenko, D. A. Sidorov-Biryukov, A. M. Zheltikov, and J. W. Haus, J. Opt. Soc. Am. B 19, 2273 (2002).
9. H. Sun, W. Shi, and Y. J. Ding, Proceedings of 2003 Lasers and Electro-Optics Society Annual Meeting, 2003, Vol. 2, p. 942.
10. Z. Yu, H. Gao, W. Wu, H. Ge, and S. Y. Chou, J. Vac. Sci. Technol. B 21, 2874 (2003).
11. K. Hane and Y. Kanamori, Proceedings 2001 Pacific Rim Conference on Lasers and Electro-Optics Technical Digest (Japan, 2001), p. I186-I187.
12. S. Grigoropoulos, E. Gogolides, A. D. Tserepi, and A. G. Nassiopoulos, J. Vac. Sci. Technol. B 15, 640 (1997).
13. E. Gogolides, S. Grigoropoulos, and A. G. Nassiopoulos, Microelectron. Eng. 27, 449 (1995).
14. C. F. H. Gondran, E. Morales, A. Guerry, W. Xiong, C. R. Cleavelin, R. Wise, S. Balasubramanian, and T.-J. King, Mater. Res. Soc. Symp. Proc. 811, 365 (2004).
15. F. Llopis and I. Tobias, Prog. Photovoltaics 13, 27 (2005).
16. T. Syau, B. Baliga, H. Jayant, and W. Raymond, J. Electrochem. Soc. 138, 3076 (1991).
17. I. W. Rangelow, J. Vac. Sci. Technol. A 21, 1550 (2003).
18. A. W. Stephen and M. A. Green, Sol. Energy Mater. Sol. Cells 45, 255 (1997).
19. K. A. Reihardt and S. M. Kelso, Proc. SPIE 2638, 147 (1995).
20. K. A. Valiev, The Physics of Submicron Lithography (Plenum, New York, 1992), pp. 237-239.
21. L. D. Dyer, G. J. Grant, C. M. Tiption, and A. E. Stephens, J. Electrochem. Soc. 136, 3016 (1989).