Transfer of functional memory devices to any substrate

Physica Status Solidi - Rapid Research Letters

Volumn 7, Issue 5, 2013, Pages 326-331

  Choi, Ji Min ^a   Kim, Moon Seok ^a   Seol, Myeong Lok ^a   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Non volatile memory; Resistive memory; Transfer printing; Unconventional substrates

Indexed keywords

ELECTRICAL CHARACTERISTIC; INTEGRATED ELECTRONICS; NON-VOLATILE MEMORY; PROCESS COMPATIBILITY; RESISTIVE MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RETENTION CHARACTERISTICS; TRANSFER PRINTING;

ALUMINUM FOIL; DATA STORAGE EQUIPMENT; ELECTRON DEVICES; ELECTRONICS ENGINEERING; PLASTIC BOTTLES; POLYIMIDES; PRINTING; RANDOM ACCESS STORAGE;

SUBSTRATES;

EID: 84877904336     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201307084     Document Type: Article

References (48)

1. G. E. Moore, IEEE Int. Solid-State Circuits Conf. 1, 20 (2003).
2. G. E. Moore, Electronics 38, 114 (1965).
3. R. H. Reuss et al., Proc. IEEE 93, 1239 (2005).
4. T. Tsutsui and K. Fujita, Adv. Mater. 14, 949 (2002).
5. M. Irimia-Vladu et al., Mater. Today 15, 340 (2012).
6. M. Berggren et al., Nature Mater. 6, 3 (2007).
7. D. Tobjörk and R. Österbacka, Adv. Mater. 23, 1935 (2011).
8. A. Hübler et al., Adv. Energy Mater. 1, 1018 (2011).
9. A. C. Siegel et al., Adv. Funct. Mater. 20, 28 (2010).
10. W. Lim et al., Appl. Phys. Lett. 96, 053510 (2010).
11. J. Sun et al., Appl. Phys. Lett. 95, 222108 (2009).
12. R. Martins et al., Appl. Phys. Lett. 93, 203501 (2008).
13. F. Eder et al., Appl. Phys. Lett. 84, 2673 (2004).
14. P. Andersson et al., Adv. Mater. 14, 1460 (2002).
15. C. H. Lee et al., Nano Lett. 11, 3435 (2011).
16. H.-J. Chung et al., Adv. Funct. Mater. 21, 3029 (2011).
17. D.-H. Kim et al., Adv. Mater. 21, 3703 (2009).
18. U. Zschieschang et al., Adv. Mater. 23, 654 (2011).
19. M. A. Khan et al., Adv. Mater. 24, 2165 (2012).
20. D.-H. Kim et al., Appl. Phys. Lett. 95, 133701 (2009).
21. D.-H. Kim et al., Nature Mater. 9, 511 (2010).
22. J.-U. Park et al., Nature Mater. 11, 120 (2012).
23. D.-H. Kim et al., Science 333, 838 (2011).
24. T. Sekitani et al., Science 326, 1516 (2009).
25. S. K. Hwang et al., Nano Lett. 12, 2217 (2012).
26. S. Kim et al., Nano Lett. 11, 5438 (2011).
27. H. Y. Jeong et al., Nano Lett. 10, 4381 (2010).
28. S.-J. Kim et al., Nano Lett. 10, 2884 (2010).
29. Y. Ji et al., Adv. Mater. 22, 3071 (2010).
30. J. Yun et al., J. Mater. Chem. 19, 2082 (2009).
31. S. Kim and Y.-K. Choi, Appl. Phys. Lett. 92, 223508 (2008).
32. A. Carlson et al., Adv. Mater. 24, 5284 (2012).
33. D.-H. Kim et al., Mater. Res. Soc. Bull. 37, 226 (2012).
34. J. A. Rogers et al., Nature 477, 45 (2011).
35. J. A. Rogers et al., Science 327, 1603 (2010).
36. C. H. Lee et al., Proc. Natl. Acad. Sci. USA 107, 9950 (2010).
37. D.-H. Kim et al., Science 320, 507 (2008).
38. J.-H. Ahn et al., Science 314, 1754 (2006).
39. D.-H. Kim et al., Small 5, 2841 (2009).
40. M.-S. Kim et al., Appl. Phys. Lett. 101, 243503 (2012).
41. J. Wu et al., Appl. Phys. Lett. 99, 061911 (2011).
42. M.-C. Chen et al., Electrochem. Solid-State Lett. 13, H191 (2010).
43. Z. Q. Wang et al., IEEE Electron Device Lett. 32, 1442 (2011).
44. T. Lee and Y. Chen, Mater. Res. Soc. Bull. 37, 144 (2012).
45. B. Cho et al., Adv. Funct. Mater. 21, 2806 (2011).
46. R. Waser et al., Adv. Mater. 21, 2632 (2009).
47. A. Sawa, Mater. Today 11, 28 (2008).
48. R. Waser and M. Aono, Nature Mater. 6, 833 (2007).