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Applied Physics Letters

Volumn 95, Issue 22, 2009, Pages

Low-voltage electric-double-layer paper transistors gated by microporous SiO2 processed at room temperature

(4) Sun, Jia a Wan, Qing a Lu, Aixia a Jiang, Jie a

a HUNAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE LAYERS; ELECTRON FIELD; GATE VOLTAGE SWING; LOW-VOLTAGE; MICROPOROUS; ON/OFF RATIO; OPERATING VOLTAGE; ROOM TEMPERATURE; SPECIFIC CAPACITANCE; SUBTHRESHOLD;

MICROPOROSITY; SILICON COMPOUNDS; THIN FILM TRANSISTORS;

CAPACITANCE;

EID: 71949089355 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3270001 Document Type: Article

Times cited : (58)

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