Defects in amorphous phase-change materials

Journal of Materials Research

Volumn 28, Issue 9, 2013, Pages 1139-1147

  Luckas, Jennifer ^a,b   Krebs, Daniel ^c   Grothe, Stephanie ^a   Klomfa, Josef ^d   Carius, Reinhard ^b   Longeaud, Christophe ^a   Wuttig, Matthias ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b UNIV PARIS SUD   (France)

^c IBM RESEARCH ZURICH   (Switzerland)

^d FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CHALCOGENIDE; AMORPHOUS PHASE-CHANGE MATERIAL; ELECTRICAL THRESHOLD FIELD; EXPERIMENTAL EVIDENCE; HIGH DEFECT DENSITIES; MODULATED PHOTOCURRENT; NANOSCALE TECHNOLOGIES; PHOTOTHERMAL DEFLECTION SPECTROSCOPY;

AMORPHOUS ALLOYS; CHALCOGENIDES; DEFECT DENSITY; DEFECTS; ENERGY GAP; GERMANIUM; GERMANIUM ALLOYS; PHASE CHANGE MEMORY; SWITCHING; TELLURIUM COMPOUNDS;

AMORPHOUS MATERIALS;

EID: 84877714978     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2013.72     Document Type: Article

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