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Volumn 102, Issue 17, 2013, Pages

Evidence of atomically resolved 6 × 6 buffer layer with long-range order and short-range disorder during formation of graphene on 6H-SiC by thermal decomposition

Author keywords

[No Author keywords available]

Indexed keywords

CARBON SOURCE; DIFFERENT VOLTAGES; FORMATION MECHANISM; GRAPHENE GROWTH; LONG RANGE ORDERS; SILICON CLUSTERS; STM IMAGES;

EID: 84877282121     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4804290     Document Type: Article
Times cited : (23)

References (34)
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  • 13
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    • (2004) Surf. Sci. , vol.558 , pp. 145
    • Tok, E.S.1    Ong, W.J.2    Wee, A.T.S.3
  • 14
    • 33144460582 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.73.045330
    • W. Ong and E. Tok, Phys. Rev. B 73, 045330 (2006). 10.1103/PhysRevB.73. 045330
    • (2006) Phys. Rev. B , vol.73 , pp. 045330
    • Ong, W.1    Tok, E.2
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    • 84855468017 scopus 로고    scopus 로고
    • 10.1016/j.surfre2011.12.001
    • M. Batzill, Surf. Sci. Rep. 67, 83 (2012). 10.1016/j.surfrep.2011.12.001
    • (2012) Surf. Sci. Rep. , vol.67 , pp. 83
    • Batzill, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.