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Volumn 405, Issue 17, 2010, Pages 3576-3580

Nucleation effect of Sia of 6HSiC-(0 0 0 1) (√3×√3)R30° surface: First-principles study

Author keywords

6HSiC; Ab initio; Adsorption; Buffer layer; Graphene; Growth

Indexed keywords

6HSIC; AB INITIO; ADSORPTION ENERGIES; C ATOMS; CARBON AD-ATOMS; DESORPTION ENERGY; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; GRAPHENE GROWTH; NUCLEATION CENTER; NUCLEATION EFFECT;

EID: 77955551363     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2010.05.043     Document Type: Article
Times cited : (5)

References (34)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.