Distinguishing the H3 and T4 silicon adatom model on 6H-SiC(0001) √3 × √3R30° reconstruction by dynamic rocking beam approach

Journal of Chemical Physics

Volumn 119, Issue 3, 2003, Pages 1789-1793

  Xie, X N ^a   Yakolev, Nikolai ^b   Loh, Kian Ping ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE COUPLED DEVICES; COMPUTER SIMULATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SUBSTRATES;

SUPERSTRUCTURES;

SILICON CARBIDE;

EID: 0041765683     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1580799     Document Type: Article

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