Structural study of the SiC(0001)(√3 × √3)-R30° surfaces by reflection high-energy electron diffraction rocking curves

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 2 B, 2002, Pages

  Aoyama, Tomohiro ^a,b   Hisada, Yoshiyuki ^a   Mukainakano, Shinichi ^a   Ichimiya, Ayahiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b DENSO CORPORATION   (Japan)

Author keywords

AES; Reconstruction; RHEED; RHEED rocking curve; SiC(0001); Surface

Indexed keywords

ADSORPTION; ANNEALING; AUGER ELECTRON SPECTROSCOPY; HONEYCOMB STRUCTURES; PHASE TRANSITIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SURFACE STRUCTURE; SURFACES;

AUGER SPECTRA;

SILICON CARBIDE;

EID: 0037085208     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.L174     Document Type: Article

References (21)