Erroneous p-type assignment by Hall effect measurements in annealed ZnO films grown on InP substrate

Journal of Applied Physics

Volumn 113, Issue 16, 2013, Pages

  Macaluso, R ^a   Mosca, M ^a   Cali C ^a   Di Franco, F ^a   Santamaria, M ^a   Di Quarto, F ^a   Reverchon, J L ^b  

^a UNIVERSITY OF PALERMO   (Italy)

^b THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; C-V MEASUREMENT; CHARACTERIZATION TECHNIQUES; DIFFERENTIAL CAPACITANCE; HALL EFFECT MEASUREMENT; HALL MEASUREMENTS; P-TYPE CONDUCTIVITY; POSTGROWTH ANNEALING;

ANNEALING; ELECTRIC PROPERTIES; HALL EFFECT; METALLIC FILMS; PULSED LASER DEPOSITION; SUBSTRATES; ZINC OXIDE;

MEASUREMENTS;

EID: 84877269103     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4803080     Document Type: Article

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