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Russian Journal of Electrochemistry

Volumn 46, Issue 11, 2010, Pages 1306-1322

A critical assessment of the Mott-Schottky analysis for the characterisation of passive film-electrolyte junctions

(4) La Mantia, F a Habazaki, H b Santamaria, M c Di Quarto, F c

a Stanford University (United States)

b HOKKAIDO UNIVERSITY (Japan)

c UNIVERSITY OF PALERMO (Italy)

Author keywords

A SC schottky barrier; Mott Schottky plots; niobia; passive films

Indexed keywords

BLOCKING BEHAVIOUR; CHARACTERISATION; CHARACTERISTIC ENERGY; CRITICAL ASSESSMENT; CRYSTALLINE SEMICONDUCTORS; ELECTROLYTE JUNCTIONS; ELECTROLYTIC SOLUTION; EQUIVALENT ELECTRICAL CIRCUITS; EXPERIMENTAL DATA; EXPERIMENTAL DATA ANALYSIS; FREQUENCY DEPENDENCIES; LOCALIZED ELECTRONIC STATE; MOTT-SCHOTTKY; MOTT-SCHOTTKY ANALYSIS; MOTT-SCHOTTKY PLOTS; NIOBIA; PASSIVE FILMS; SCHOTTKY BARRIERS; THEORETICAL SIMULATION;

AMORPHOUS FILMS; AMORPHOUS SEMICONDUCTORS; COMPUTER SIMULATION; ELECTRIC NETWORK ANALYSIS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; NIOBIUM COMPOUNDS; SCHOTTKY BARRIER DIODES;

SEMICONDUCTOR JUNCTIONS;

EID: 78650600161 PISSN: 10231935 EISSN: 16083342 Source Type: Journal
DOI: 10.1134/S102319351011011X Document Type: Article

Times cited : (71)

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