Photoluminescence investigation of ZnO:P nanoneedle arrays on InP substrate by pulsed laser deposition

Applied Surface Science

Volumn 255, Issue 8, 2009, Pages 4430-4433

  Yu, D Q ^a   Hu, L Z ^a   Li, J ^a   Hu, H ^a   Zhang, H Q ^a   Bian, J M ^a   Zhu, J X ^a   Qiao, S S ^a   Chen, X ^a   Wang, B ^a  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Nanoneedle arrays; Phosphorus doped; Photoluminescence; ZnO

Indexed keywords

BINDING ENERGY; DOPING (ADDITIVES); ELECTRONS; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; NANONEEDLES; PHOSPHORUS; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; PULSED LASER DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE; ZINC OXIDE;

EXCITATION INTENSITY; LOW TEMPERATURE PHOTOLUMINESCENCE; NANONEEDLE ARRAYS; NEUTRAL ACCEPTOR BOUND EXCITONS; PHOSPHORUS-DOPED; PHOSPHORUS-DOPED ZNO; PHOTOLUMINESCENCE INVESTIGATION; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES;

PULSED LASERS;

EID: 58349091258     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.11.041     Document Type: Article

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