Structural and electrical properties of rectifying p-ZnO/n+-InP heterojunction

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7603, Issue , 2010, Pages

  Mandal, Arjun ^a   Chakrabarti, Subhananda ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Activation energy; Current rectification ratio; Hall measurement; II VI wide band gap material; Lattice strain; UV VIS spectroscopy; XPS; XRD

Indexed keywords

HALL MEASUREMENTS; LATTICE STRAIN; RECTIFICATION RATIO; UV/ VIS SPECTROSCOPY; WIDE BAND-GAP MATERIAL; XPS; XRD;

ACTIVATION ENERGY; DISTILLATION; ELECTRIC PROPERTIES; ENERGY GAP; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; HETEROJUNCTIONS; HOLE CONCENTRATION; METALLIC FILMS; OXYGEN; PULSED LASER DEPOSITION; PULSED LASERS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR DIODES; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

ELECTRIC RECTIFIERS;

EID: 77951755410     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.840525     Document Type: Conference Paper

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