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Journal of Applied Physics

Volumn 110, Issue 11, 2011, Pages

Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

(6) To, C K a Yang, B a Su, S C a Ling, C C a Beling, C D a Fung, S a

a UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; AS-GROWN; DEEP-LEVEL DEFECTS; GREEN LUMINESCENCE; HALL MEASUREMENTS; LOW SUBSTRATE TEMPERATURE; P-TYPE; P-TYPE CONDUCTIVITY; POSTGROWTH ANNEALING; RADIO FREQUENCY MAGNETRON SPUTTERING; RADIO FREQUENCY MAGNETRON SPUTTERING METHOD; SECONDARY ION MASS SPECTROSCOPY; ZNO; ZNO FILMS;

ARSENIC; HOLE CONCENTRATION; POSITRON ANNIHILATION SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; ZINC; ZINC OXIDE;

ANNEALING;

EID: 84858604130 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3665713 Document Type: Article

Times cited : (15)

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