Study on anomalous high p -type conductivity in ZnO films on silicon substrate prepared by ultrasonic spray pyrolysis

Applied Physics Letters

Volumn 90, Issue 6, 2007, Pages

  Zhao, Jun Liang ^a,c   Li, Xiao Min ^a   Krtschil, Andŕ ^b   Krost, Alois ^b   Yu, Wei Dong ^a   Zhang, Yi Wen ^a,c   Gu, Yan Fei ^a,c   Gao, Xiang Dong ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

^c UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GRAIN GROWTH; HALL EFFECT; PYROLYSIS; SEMICONDUCTING SILICON; ULTRASONICS; ZINC OXIDE;

MICROCONDUCTIVITY; SCANNING CAPACITANCE MICROSCOPY; SILICON SUBSTRATES; ULTRASONIC SPRAY PYROLYSIS;

SEMICONDUCTING FILMS;

EID: 33846986295     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2437679     Document Type: Article

References (15)

1. S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steine, Prog. Mater. Sci. 50, 293 (2005).
2. Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doǧan, V. Avrutin, S. J. Cho, and H Morko̧, J. Appl. Phys. 98, 041301 (2005).
3. D. C. Look and B. Claflin, Phys. Status Solidi B 241, 624 (2004).
4. R. F. Service, Science 276, 895 (1997).
5. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, Nat. Mater. 4, 42 (2005).
6. J. M. Bian, X. M. Li, X. D. Gao, W. D. Yu, and L. D. Chen, Appl. Phys. Lett. 84, 541 (2004).
7. C. Y. Zhang, X. M. Li, J. M. Bian, W. D. Yu, and X. D. Gao, Solid State Commun. 132, 75 (2004).
8. F. Zhuge, L. P. Zhu, Z. Z. Ye, D. W. Ma, J. G. Lu, J. Y. Huang, F. Z. Wang, Z. G. Ji, and S. B. Zhang, Appl. Phys. Lett. 87, 092103 (2005).
9. Sh. U. Yuldashev, G. N. Panin, T. W. Kang, R. A. Nusretov, and I. V. Khvan, J. Appl. Phys. 100, 013704 (2006).
10. A. Krtschil, A. Dadgar, N. Oleynik, J. Bläsing, A. Diez, and A. Krost, Appl. Phys. Lett. 87, 262105 (2005).
11. Support notes No. 224 rev. D and No. 289 rev. A, Digital Instruments/Veeco, Santa Barbara, CA (www.veeco.com).
12. G. M. Voronkova, A. V. Zuev, V. V. Zuev, A. D. Kiryukhin, L. F. Chepik, and E. P. Troshina, Inorg. Mater. 39, 904 (2003).
13. C. Y. Zhang, X. M. Li, X. D. Gao, J. L. Zhao, K. S. Wan, and J. M. Bian, Chem. Phys. Lett. 420, 453 (2006).
14. D. C. Look, Semicond. Sci. Technol. 20, S55 (2005).
15. Y. C. Cheng and E. A. Sullivan, J. Appl. Phys. 45, 187 (1974).