Spontaneous formation of InGaN nanowall network directly on Si

Applied Physics Letters

Volumn 102, Issue 17, 2013, Pages

  Soto Rodriguez, P E D ^a   Kumar, Praveen ^a   Gomez V J ^a   Alvi, N H ^a   Manuel J M ^b   Morales, F M ^b   Jimenez J J ^b   Garcia R ^b   Calleja, E ^a   Notzel R ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b UNIVERSITY OF CÁDIZ   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE NATURE; ELECTRICALLY CONDUCTIVE; ENERGY DISPERSIVE X-RAY; GOOD OPTICAL QUALITY; HIGH RESOLUTION X RAY DIFFRACTION; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SPONTANEOUS FORMATION;

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SILICON;

EID: 84877263937     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4803017     Document Type: Article

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