Epitaxial InGaN on nitridated Si(111) for photovoltaic applications

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2012, Pages 2617-2620

  Yao, Y ^a   Aldous, J D ^b   Won, D ^c   Redwing, J M ^c   Linhart, W ^d   McConville, C F ^d   Reeves, R J ^e   Veal, T D ^f   Durbin, S M ^a,b  

^a State University of New York   (United States)

^b UNIVERSITY AT BUFFALO   (United States)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

^d UNIVERSITY OF WARWICK   (United Kingdom)

^e UNIVERSITY OF CANTERBURY   (New Zealand)

^f UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

crystalline SiN; InGaN; InGaN Si heterojunction; molecular beam epitaxy; photovoltaics; silicon nitridation

Indexed keywords

ABSORBER MATERIAL; ELECTRICAL CONDUCTIVITY; EUTECTIC FORMATION; INGAN; NITRIDATION PROCESS; P-TYPE SI; PHOTOVOLTAIC APPLICATIONS; PHOTOVOLTAICS; SERIES RESISTANCES; SI (1 1 1); SI(111) SUBSTRATE;

CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; EUTECTICS; GALLIUM COMPOUNDS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOVOLTAIC CELLS; SILICON;

SILICON NITRIDE;

EID: 84869384084     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6318131     Document Type: Conference Paper

References (21)

1. V.A. Tyagai, A.M. Evstigneev. "Optical-properties of indium nitride films,", Fiz. Tekh. Poluprovodn 11, 1242, 1977.
2. Sov. Phys. Semicond. 11, 1257, 1977].
3. T.L. Tansley, C.P. Foley. "Optical band gap of indium nitride,", J. Appl. Phys. Vol. 59, pp. 3241-3244 1986.
4. 1-xN alloys (0.36<×<1)", Phys. Status Solidi B Vol. 230, pp. R4-R6, 2002.
5. xN alloys: Full-solar-spectrum photovoltaic material system", J. Appl. Phys. Vol. 94, pp. 6477-6482, 2003.
6. P.D.C. King, T.D. Veal, P.H. Jefferson, S.A. Hateld, L.F.J. Piper, C.F. McConville, F. Fuchs, J. Furthmüller, F. Bechstedt, Hai Lu, W. J. Schaff, "Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors,", Phys. Rev. B, Vol. 77, 045316, 2008.
7. H. Lu, W. J. Schaff, L. F. Eastman, and C. E. Stutz, "Surface charge accumulation of InN films grown by molecular-beam epitaxy,", Appl. Phys. Lett., Vol. 82, pp. 1736-1738, 2003.
8. I. Mahboob, T. D. Veal, and C. F. McConville, H. Lu, W. J. Schaff "Intrinsic electron accumulation at clean InN surfaces,", Phys. Rev. Lett., Vol. 92, 036804, 2009.
9. P.D.C. King, T.D. Veal, C.F. McConville, F. Fuchs, J. Furthmüller, F. Bechstedt, P. Schley, R. Goldhahn J. Schörmann, D.J. As, K. Lischka, D. Muto, H. Naoi, Hai Lu, Y. Nanishi, W. J. Schaff, "Universality of electron accumulation at wurtzite c- and a-plane and zincblende InN surfaces,", Appl. Phys. Lett., Vol. 91, 092101, 2007.
10. R.E. Jones, K.M. Yu, S.X. Li, W. Walukiewicz, J.W. Ager, E.E. Haller, H. Lu, and W.J. Schaff, "Evidence for p-type doping of InN,", Phys. Rev. Lett., Vol. 96, 125505, 2006
11. P.A. Anderson, C.H. Swartz, D. Carder, R.J. Reeves, S.M. Durbin, S. Chandril and T.H. Myers, "Buried p-type layers in Mg-doped InN,", Appl. Phys. Lett., Vol. 89, 184104, 2006.
12. J. W. Ager III, L. A. Reichertz, K. M. Yu, W.J. Schaff, T.L. Williamson, M.A. Hoffbauer, N.M. Haegel, and W. Walukiewicz, "InGaN/Si het-erojunction tandem solar cells,", in 33rd IEEE Photovoltaics Specialists Conference, 2009 p. 1.
13. J.W. Ager, L.A. Reichertz. "Electrical properties of InGaN-Si hetero-junctions,", Phys. Status Soildi C Vol. 6, no. S2, pp. S413-S416, 2009.
14. M.P. Mikhailova, K.D. Mosieev. "Transition from the Type-II brokengap heterojunction to staggered one in GaInAsSb/InAs(GaSbsystem,", Semiconductors, Vol. 41, no. 2, pp. 161-166, 2007.
15. J. Knoch, and J. Appenzeller. "Modeling of high-performance p-Type III-V heterojunction tunnel FETs,", IEEE Electron Device Lett., Vol. 31, no. 4, pp. 305-307, 2010.
16. B.M. Borg, K.A. Dick. "InAs/GaSb heterostructure nanowires for tunnel field-effect transistors,", Nano Lett., Vol. 10, pp. 4080-4085, 2010.
17. A.O. Ajagunna, A. Adikimenakis. "InN lms and nanostructures grown on Si (111) by RF-MBE,", J. Cryst. Growth Vol. 31, pp. 2058-2062, 2009.
18. A. Flink, T. Larsson. "Influence of Si on the microstructure of arc evaporated (Ti, Si)N thin films; evidence for cubic solid solutions and their thermal stability,", Surface & Coatings Technol. Vol. 200, pp. 1535-1542, 2005.
19. C.S. Gallinat, G. Koblmüller, J.S. Brown, J.S. Speck, "A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN,", J. Appl. Phys, Vol. 102, 064907, 2007.
20. M. Sobanska, K. Klosek. "Plasma-assisted MBE growth of GaN on Si(111),", Cryst. Res. Technol. Vol. 47, no. 3, pp. 307-312, 2012.
21. A. Krost, A. Dadgar. "GaN-based optoelectronics on silicon substrate,", Mater. Sci. and Eng. B Vol. 93, pp. 77-84, 2002.