First demonstration of direct growth of planar high-in-composition InGaN layers on Si

Applied Physics Express

Volumn 6, Issue 3, 2013, Pages

  Kumar, Praveen ^a   Rodriguez, Paul E D Soto ^a   Gómez, Victor J ^a   Alvi, Naveed H ^a   Calleja, Enrique ^a   Nötzel, Richard ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT GROWTH; GROWTH CONDITIONS; IN COMPOSITIONS; LOW TEMPERATURES; OPTICAL ANALYSIS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SI (1 1 1);

MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTOR QUANTUM WELLS;

SILICON;

EID: 84875494765     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.6.035501     Document Type: Article

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