Nanoscale indium variation along InGaN nanopillars grown on (1 1 1) Si substrates

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 9, 2010, Pages 2197-2202

  Kehagias, Thomas ^a  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

EDXS; HRTEM; InGaN; Nanopillars; STEM

Indexed keywords

ADLAYERS; BAND GAPS; COMPOSITIONAL HOMOGENEITY; HIGH GROWTH TEMPERATURES; INITIAL STAGES; LUMINESCENCE INTENSITY; LUMINESCENCE PROPERTIES; MIGRATION PATH; MOLE FRACTION; NANO SCALE; NANOPILLARS; RADIO FREQUENCY MOLECULAR BEAM EPITAXY; SI SUBSTRATES; SINGLE PHASE; SINGLE-CRYSTALLINE; TOP SURFACE;

CRYSTAL GROWTH; DESORPTION; LUMINESCENCE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS;

INDIUM;

EID: 77955687854     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2010.04.016     Document Type: Article

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