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Applied Physics Letters

Volumn 97, Issue 12, 2010, Pages

(7×7) reconstruction as barrier for Schottky-barrier formation at the Ga/Si(111) interface

(3) Kumar, Praveen a,b Kumar, Mahesh b Shivaprasad, S M a

a JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH (India)

b NATIONAL PHYSICAL LABORATORY (India)

Author keywords

[No Author keywords available]

Indexed keywords

BRANCHING RATIO; BULK VALUE; CORE LEVELS; FLAT BAND; PHOTOELECTRON SPECTRUM; SCHOTTKY; SCHOTTKY BARRIERS; SI (1 1 1); SPIN ORBITS; SUBMONOLAYER; SUBMONOLAYER COVERAGE;

ADSORPTION; ELECTRON DIFFRACTION; ELECTRONIC PROPERTIES; HIGH ENERGY PHYSICS; HOLOGRAPHIC INTERFEROMETRY; METALLIC COMPOUNDS; PHASE TRANSITIONS;

PHOTOELECTRON SPECTROSCOPY;

EID: 77957160629 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3490250 Document Type: Article

Times cited : (11)

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