Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface

Applied Physics Letters

Volumn 101, Issue 13, 2012, Pages

  Kumar, Praveen ^a   Tuteja, Mohit ^a   Kesaria, Manoj ^a   Waghmare, U V ^a   Shivaprasad, S M ^a  

^a JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNED NANORODS; INTERMEDIATE LAYERS; NANORODS GROWN; NON-STOICHIOMETRIC; OPTICAL EMISSIONS; SINGLE-CRYSTALLINE; SPONTANEOUS FORMATION; SURFACE NITRIDATION;

CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SILICON; SILICON NITRIDE; ZINC SULFIDE;

NANORODS;

EID: 84875530819     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4751986     Document Type: Article

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