Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy

Nanoscale Research Letters

Volumn 7, Issue 1, 2012, Pages 1-7

  Zhong, Aihua ^a   Hane, Kazuhiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

GaN growth on Si substrate; GaN nanowall network; Hall measurement; N Ga ratio; Porous GaN; TEM

Indexed keywords

GALLIUM NITRIDE; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; TRANSMISSION ELECTRON MICROSCOPY;

BAND-EDGE EMISSIONS; ELECTRICAL CONDUCTIVITY; HALL MEASUREMENTS; INTEGRATED GAS SENSORS; NANOWALL NETWORKS; POROUS GAN; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SI SUBSTRATES;

SILICON;

EID: 84875293074     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-686     Document Type: Article

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