Growth of vertically aligned InGaN nanorod arrays on p-type Si substrates for heterojunction diodes

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 12, 2010, Pages 8139-8144

  Wu, Kemin ^a   Han, Tao ^a   Shen, Kai ^a   Liu, Bo ^b   Peng, Ting ^a   Pan, Yang ^a   Sun, Handong ^b   Liu, Chang ^a  

^a WUHAN UNIVERSITY   (China)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

I V measurements; InGaN; Molecular beam epitaxy; Nanorods; Si substrates

Indexed keywords

HETEROJUNCTION DIODES; HETEROSTRUCTURE DIODES; HIGH TEMPERATURE; I-V MEASUREMENTS; INGAN; INTERFACE QUALITY; NANOROD ARRAYS; ON/OFF RATIO; P-TYPE SI; RECTIFYING BEHAVIORS; SI SUBSTRATES; SI(111) SUBSTRATE; TURN ON VOLTAGE; VERTICALLY ALIGNED;

AMORPHOUS SILICON; BUFFER LAYERS; DISTILLATION; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; HETEROJUNCTIONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANORODS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES;

SUBSTRATES;

EID: 79955544864     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.2659     Document Type: Article

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