A TCAD-based modeling of GaN/InGaN/Si solar cells

Semiconductor Science and Technology

Volumn 27, Issue 3, 2012, Pages

  Nawaz, Muhammad ^a,c   Ahmad, Ashfaq ^b  

^a University Graduate Centre (UNIK)   (Norway)

^b Process and Energy Systems Engineering Center PRESTIGE   (Pakistan)

^c ABB CORPORATE RESEARCH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER LAYERS; BAND DISCONTINUITIES; BOTTOM CELLS; COMPUTER AIDED DESIGN TOOLS; CRYSTALLINE SILICONS; DEGRADED BEHAVIOR; DOUBLE-HETEROJUNCTION; HETERO INTERFACES; INTERFACE TRAP DENSITY; N-DOPING; TANDEM SOLAR CELLS; TECHNOLOGY-BASED; TEMPERATURE COEFFICIENT; TRAP DENSITY;

CADMIUM SULFIDE SOLAR CELLS; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; CONVERSION EFFICIENCY; GALLIUM; HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE;

EFFICIENCY;

EID: 84857407266     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/3/035019     Document Type: Article

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