MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 3-4, 2012, Pages 670-672

  Bhuiyan, Ashraful G ^a   Mihara, A ^a   Esaki, T ^a   Sugita, K ^a   Hashimoto, A ^a   Yamamoto, A ^a   Watanabe, N ^b   Yokoyama, H ^b   Shigekawa, N ^b  

^a UNIVERSITY OF FUKUI   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

InGaN; MOVPE; Si(111); XRD

Indexed keywords

ALN; COMPARATIVE STUDIES; DROPLET FORMATION; INGAN; INN FILMS; MOLAR RATIO; MOVPE GROWTH; PRE-TREATMENT; SI (1 1 1); SI(111) SUBSTRATE; SINGLE-CRYSTALLINE; SUBSTRATE SURFACE; TANDEM CELLS; UNDERLYING LAYERS; XRD;

GALLIUM NITRIDE; INDIUM; METALLORGANIC VAPOR PHASE EPITAXY; PHASE SEPARATION; SILICON; SUBSTRATES;

GALLIUM ALLOYS;

EID: 84858802084     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100355     Document Type: Article

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