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Volumn 257, Issue 20, 2011, Pages 8675-8678

Improving p-type contact characteristics by Ni-assisted annealing and effects on surface morphologic evolution of InGaN LED films grown on Si (1 1 1)

(4) Wang, Guangxu a Xiong, Chuanbing a,b Liu, Junlin a,b Jiang, Fengyi a,b

a NANCHANG UNIVERSITY (China)

b Lattice Power Jiangxi Corporation (China)

Author keywords

Light emitting diode (LED); Ni assisted annealing; p type contact characteristic; Surface morphology

Indexed keywords

ANNEALING; GALLIUM ALLOYS; III-V SEMICONDUCTORS; INDENTATION; INDIUM ALLOYS; LIGHT EMITTING DIODES; MORPHOLOGY; SEMICONDUCTOR ALLOYS; SILICON; SURFACE MORPHOLOGY;

ANNEAL TEMPERATURES; DEFECT-SELECTIVE ETCHING; ETCHING METHOD; LIGHT EMITTING DIODE (LED); P-TYPE CONTACT; SPECIFIC CONTACT RESISTIVITY; SURFACE STEPS; THERMAL-ANNEALING;

SURFACE DEFECTS;

EID: 79959354125 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2011.05.046 Document Type: Article

Times cited : (5)

References (22)

1
- 71549141354
- H.W. Jang, S.W. Ryu, H.K. Yu, S. Lee, and J.L. Lee Nanotechnology 21 2010 025203
- (2010) Nanotechnology , vol.21 , pp. 025203
- Jang, H.W.¹ Ryu, S.W.² Yu, H.K.³ Lee, S.⁴ Lee, J.L.⁵

2
- 0001291574
- H.W. Jang, K.H. Kim, J.K. Kim, S.W. Hwang, J.J. Yang, K.J. Lee, S.J. Son, and J.L. Lee Appl. Phys. Lett. 79 2001 1822
- (2001) Appl. Phys. Lett. , vol.79 , pp. 1822
- Jang, H.W.¹ Kim, K.H.² Kim, J.K.³ Hwang, S.W.⁴ Yang, J.J.⁵ Lee, K.J.⁶ Son, S.J.⁷ Lee, J.L.⁸

3
- 77958484015
- S.H. Jang, and J.S. Jang Electrochem. Solid State Lett. 13 2010 H403
- (2010) Electrochem. Solid State Lett. , vol.13 , pp. 403
- Jang, S.H.¹ Jang, J.S.²

4
- 0026819254
- S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa Jpn. J. Appl. Phys. 31 1992 L139
- (1992) Jpn. J. Appl. Phys. , vol.31 , pp. 139
- Nakamura, S.¹ Mukai, T.² Senoh, M.³ Iwasa, N.⁴

5
- 84883188181
- H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki Jpn. J. Appl. Phys. 28 1989 L2112
- (1989) Jpn. J. Appl. Phys. , vol.28 , pp. 2112
- Amano, H.¹ Kito, M.² Hiramatsu, K.³ Akasaki, I.⁴

6
- 0001575626
- M. Miyachi, T. Tanaka, Y. Kimura, and H. Ota Appl. Phys. Lett. 72 1998 1101
- (1998) Appl. Phys. Lett. , vol.72 , pp. 1101
- Miyachi, M.¹ Tanaka, T.² Kimura, Y.³ Ota, H.⁴

7
- 0032649247
- Y. Koide, T. Maeda, T. Kawakami, S. Fujita, T. Uemura, N. Shibata, and M. Murakami J. Electron. Mater. 28 1999 341
- (1999) J. Electron. Mater. , vol.28 , pp. 341
- Koide, Y.¹ Maeda, T.² Kawakami, T.³ Fujita, S.⁴ Uemura, T.⁵ Shibata, N.⁶ Murakami, M.⁷

8
- 0036903688
- H.W. Choi, M.A. Rana, S.J. Chua, T. Osipowicz, and J.S. Pan Semicond. Sci. Technol. 17 2002 1223
- (2002) Semicond. Sci. Technol. , vol.17 , pp. 1223
- Choi, H.W.¹ Rana, M.A.² Chua, S.J.³ Osipowicz, T.⁴ Pan, J.S.⁵

9
- 0000954106
- M. Kuball, F. Demangeot, J. Frandon, M.A. Renucci, J. Massies, N. Grandjean, R.L. Aulombard, and O. Briot Appl. Phys. Lett. 73 1998 960
- (1998) Appl. Phys. Lett. , vol.73 , pp. 960
- Kuball, M.¹ Demangeot, F.² Frandon, J.³ Renucci, M.A.⁴ Massies, J.⁵ Grandjean, N.⁶ Aulombard, R.L.⁷ Briot, O.⁸

10
- 0001645744
- C.C. Chuo, C.M. Lee, and J.I. Chyi Appl. Phys. Lett. 78 2001 314
- (2001) Appl. Phys. Lett. , vol.78 , pp. 314
- Chuo, C.C.¹ Lee, C.M.² Chyi, J.I.³

11
- 79955992500
- Y.S. Lin, K.J. Ma, C. Hsu, Y.Y. Chung, C.W. Liu, S.W. Feng, Y.C. Cheng, C.C. Yang, M.H. Mao, H.W. Chuang, C.T. Kuo, J.S. Tsang, and T.E. Weirich Appl. Phys. Lett. 80 2002 2571
- (2002) Appl. Phys. Lett. , vol.80 , pp. 2571
- Lin, Y.S.¹ Ma, K.J.² Hsu, C.³ Chung, Y.Y.⁴ Liu, C.W.⁵ Feng, S.W.⁶ Cheng, Y.C.⁷ Yang, C.C.⁸ Mao, M.H.⁹ Chuang, H.W.¹⁰ Kuo, C.T.¹¹ Tsang, J.S.¹² Weirich, T.E.¹³

12
- 0035821069
- I. Waki, H. Fujioka, M. Oshima, H. Miki, and A. Fukizawa Appl. Phys. Lett. 78 2001 2899
- (2001) Appl. Phys. Lett. , vol.78 , pp. 2899
- Waki, I.¹ Fujioka, H.² Oshima, M.³ Miki, H.⁴ Fukizawa, A.⁵

13
- 0000739940
- H.S. Venugopalan, S.E. Mohney, B.P. Luther, S.D. Wolter, and J.M. Redwing J. Appl. Phys. 82 1997 650
- (1997) J. Appl. Phys. , vol.82 , pp. 650
- Venugopalan, H.S.¹ Mohney, S.E.² Luther, B.P.³ Wolter, S.D.⁴ Redwing, J.M.⁵

14
- 0016950238
- A. Shintani, and S. Minagawa J. Electrochem. Soc. 123 1976 706
- (1976) J. Electrochem. Soc. , vol.123 , pp. 706
- Shintani, A.¹ Minagawa, S.²

15
- 0000343514
- P. Visconti, K.M. Jones, M.A. Reshchikov, R. Cingolani, H. Morkoc, and R.J. Molnar Appl. Phys. Lett. 77 2000 3532
- (2000) Appl. Phys. Lett. , vol.77 , pp. 3532
- Visconti, P.¹ Jones, K.M.² Reshchikov, M.A.³ Cingolani, R.⁴ Morkoc, H.⁵ Molnar, R.J.⁶

16
- 27644592789
- C.L. Mo, W.Q. Fang, Y. Pu, H.C. Liu, and F.Y. Jiang J. Cryst. Growth 285 2005 312
- (2005) J. Cryst. Growth , vol.285 , pp. 312
- Mo, C.L.¹ Fang, W.Q.² Pu, Y.³ Liu, H.C.⁴ Jiang, F.Y.⁵

17
- 0035893994
- I. Waki, H. Fujioka, M. Oshima, H. Miki, and M. Okuyama J. Appl. Phys. 90 2001 6500
- (2001) J. Appl. Phys. , vol.90 , pp. 6500
- Waki, I.¹ Fujioka, H.² Oshima, M.³ Miki, H.⁴ Okuyama, M.⁵

18
- 4944240278
- Z. Liliental-Weber, Y. Chen, S. Ruvimov, and J. Washburn Phys. Rev. Lett. 79 1997 2835
- (1997) Phys. Rev. Lett. , vol.79 , pp. 2835
- Liliental-Weber, Z.¹ Chen, Y.² Ruvimov, S.³ Washburn, J.⁴

19
- 57349175527
- A. Mogilatenko, W. Neumann, E. Richter, M. Weyers, B. Velickov, and R. Uecker Phys. Status Solidi (c) 5 2008 3712
- (2008) Phys. Status Solidi (C) , vol.5 , pp. 3712
- Mogilatenko, A.¹ Neumann, W.² Richter, E.³ Weyers, M.⁴ Velickov, B.⁵ Uecker, R.⁶

20
- 0000292713
- M.W. Cole, F. Ren, and S.J. Pearton Appl. Phys. Lett. 71 1997 3004
- (1997) Appl. Phys. Lett. , vol.71 , pp. 3004
- Cole, M.W.¹ Ren, F.² Pearton, S.J.³

21
- 79959332537
- S. Hautakangas, J. Oila, M. Alatalo, K. Saarinen, L. Liszkay, D. Seghier, and H.P. Gislason Phys. Rev. Lett. 90 2003
- (2003) Phys. Rev. Lett. , vol.90
- Hautakangas, S.¹ Oila, J.² Alatalo, M.³ Saarinen, K.⁴ Liszkay, L.⁵ Seghier, D.⁶ Gislason, H.P.⁷

22
- 0026867861
- S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai Jpn. J. Appl. Phys. 31 1992 1258
- (1992) Jpn. J. Appl. Phys. , vol.31 , pp. 1258
- Nakamura, S.¹ Iwasa, N.² Senoh, M.³ Mukai, T.⁴

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