Improved photoluminescence efficiency in UV nanopillar light emitting diode structures by recovery of dry etching damage

Journal of Nanoscience and Nanotechnology

Volumn 13, Issue 5, 2013, Pages 3645-3649

  Jeon, Dae Woo ^a,b   Jang, Lee Woon ^a   Jeon, Ju Won ^a   Park, Jae Woo ^a   Song, Young Ho ^b   Jeon, Seong Ran ^b   Ju, Jin Woo ^b   Baek, Jong Hyeob ^b   Lee, In Hwan ^a  

^a Chonbuk National University   (South Korea)

^b Korea Photonics Technology Institute (KOPTI)   (South Korea)

Author keywords

Chemical treatment; Dry etching; InGaN AlInGaN LED; Nanopillar

Indexed keywords

CHEMICAL PASSIVATION; CHEMICAL TREATMENTS; HIGH-TEMPERATURE ANNEALING; INTERNAL QUANTUM EFFICIENCY; LIGHT-EXTRACTION EFFICIENCY; NANOPILLAR; NANOPILLAR STRUCTURES; PHOTOLUMINESCENCE EFFICIENCY;

ANNEALING; DRY ETCHING; EFFICIENCY; NANOSTRUCTURES; PASSIVATION; PHOTOELECTRONS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

LIGHT EMITTING DIODES;

NANOMATERIAL;

ARTICLE; CHEMISTRY; DESICCATION; EQUIPMENT; EQUIPMENT DESIGN; EQUIPMENT FAILURE; ILLUMINATION; LUMINESCENCE; METHODOLOGY; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE; ULTRAVIOLET RADIATION;

DESICCATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LIGHTING; LUMINESCENT MEASUREMENTS; NANOSTRUCTURES; PARTICLE SIZE; SEMICONDUCTORS; ULTRAVIOLET RAYS;

MLCS; MLOWN;

EID: 84876942930     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2013.7315     Document Type: Conference Paper

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