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Volumn 89, Issue 15, 2006, Pages
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Effects of the material polarity on the green emission properties of InGaN/GaN multiple quantum wells
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Author keywords
[No Author keywords available]
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Indexed keywords
GREEN LIGHT EMISSION;
QUANTUM YIELD;
QUANTUM-DOT STRUCTURES;
TEMPERATURE INSENSITIVITY;
GALLIUM NITRIDE;
LIGHT EMISSION;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
PHOTOLUMINESCENCE;
SEMICONDUCTING INDIUM COMPOUNDS;
TRANSMISSION ELECTRON MICROSCOPY;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 33750026728
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2360247 Document Type: Article |
Times cited : (30)
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References (7)
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