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Volumn 108, Issue 7, 2010, Pages

The fabrication of GaN-based nanopillar light-emitting diodes

(9) Zhu, Jihong a Wang, Liangji a Zhang, Shuming a Wang, Hui a Zhao, Degang a Zhu, Jianjun a Liu, Zongshun a Jiang, Desheng a Yang, Hui a,b

a INSTITUTE OF SEMICONDUCTORS (China)

b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

A-DENSITY; AS-GROWN; BLUE SHIFT; CHEMICAL ETCHING; CURRENT VOLTAGE CURVE; DURATION TIME; ETCHING MASKS; INDUCED DAMAGE; INGAN/GAN; LED DEVICE; MULTIPLE QUANTUM WELLS; NANO-PILLAR ARRAYS; NANOLED; NANOPILLAR; NANOPILLARS; NI NANO-DOTS; P-TYPE; PHOTOLUMINESCENCE INTENSITIES; PLANARIZATION; SELF-ASSEMBLED NANODOTS;

ELECTROMAGNETIC INDUCTION; FABRICATION; GALLIUM ALLOYS; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; LIGHT EMISSION; PLASMA ETCHING; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 77958156814 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3488905 Document Type: Article

Times cited : (41)

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