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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4, 2002, Pages 1924-1928

Pulsed metalorganic chemical vapor deposition of quaternary AlInGaN layers and multiple quantum wells for ultraviolet light emission

(7) Chen, Changqing a Yang, Jinwei a Ryu, Mee Yi a Zhang, Jianping a Kuokstis, Edmundas a Simin, Grigory a Khan, M Asif a

a University of South Carolina (United States)

Author keywords

AlInGaN; Localized band tail states; MQW; PL; Pulsed MOCVD; UV LED

Indexed keywords

COMPOSITION; DENSITY (OPTICAL); EXCITONS; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THICKNESS CONTROL; ULTRAVIOLET RADIATION;

EMISSION PEAK; TRIETHYLGALLIUM; TRIMETHYL ALUMINUM; TRIMETHYLINDIUM;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0036529207 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.1924 Document Type: Article

Times cited : (25)

References (21)

1
- 0003453296
- (Springer, Heidelberg)
- (1997) The Blue Laser Diode
- Nakamura, S.¹ Fasol, G.²

2
- 0005985130
- (1999) J. Appl. Phys. , vol.86 , pp. 1
- Pearton, S.J.¹ Zolper, J.C.² Shul, R.J.³ Ren, F.⁴

3
- 0035416042
- (2001) Jpn. J. Appl. Phys. , vol.40
- Nagahama, S.¹ Yanamoto, T.² Sano, M.³ Mukai, T.⁴

4
- 0039886767
- (2001) Appl. Phys. Lett. , vol.78 , pp. 3927
- Nishida, T.¹ Saito, H.² Kobayashi, N.³

5
- 0033175440
- (1999) Jpn. J. Appl. Phys. , vol.38
- Deguchi, T.¹ Sekiguchi, K.² Nakamura, A.³ Sota, T.⁴ Matsuo, R.⁵ Chichibu, S.⁶ Nakamura, S.⁷

6
- 0642275027
- (1997) Phys. Rev. B , vol.56 , pp. 10024
- Bernardini, F.¹ Fiorentini, V.² Vanderbilt, D.³

7
- 25544463102
- (1992) Appl. Phys. Lett. , vol.60 , pp. 1366
- Khan, M.A.¹ Skogman, R.A.² Van Hove, J.M.³ Olson, D.T.⁴ Kuznia, J.N.⁵

8
- 0035855007
- (2001) Appl. Phys. Lett. , vol.79 , pp. 925
- Zhang, J.P.¹ Kuokstis, E.² Fareed, Q.³ Wang, H.M.⁴ Yang, J.W.⁵ Simin, G.⁶ Khan, M.A.⁷

9
- 0035885666
- (2001) Jpn. J. Appl. Phys. , vol.40
- Zhang, J.P.¹ Adivarahan, V.² Wang, H.M.³ Fareed, Q.⁴ Kuokstis, E.⁵ Chitnis, A.⁶ Shatalov, M.⁷ Yang, J.W.⁸ Simin, G.⁹ Khan, M.A.¹⁰ Shur, M.¹¹ Gaska, R.¹²

10
- 0005848462
- (2001) Phys. Status Solidi A
- Kuokstis, E.¹ Zhang, J.P.² Yang, J.W.³ Simin, G.⁴ Khan, M.A.⁵ Gaska, R.⁶ Shur, M.⁷

11
- 0032606534
- (1999) Appl. Phys. Lett. , vol.74 , pp. 3128
- Wang, T.¹ Nakagawa, D.² Lachab, M.³ Sugahara, T.⁴ Sakai, S.⁵

12
- 11644321949
- (1998) J. Vac. Sci. Technol. B , vol.16 , pp. 2204
- Chichibu, S.¹ Sota, T.² Wada, K.³ Nakamura, S.⁴

13
- 0000194260
- (1998) Phys. Rev. B , vol.57 , pp. 2041
- Satake, A.¹ Masumoto, Y.² Miyajima, T.³ Asatsuma, T.⁴ Nakamura, F.⁵ Ikeda, M.⁶

14
- 0031150305
- (1997) J. Cryst. Growth , vol.178 , pp. 56
- Dupuis, R.D.¹

15
- 0001128627
- (2001) Appl. Phys. Lett. , vol.78 , pp. 61
- Li, J.¹ Nam, K.B.² Kim, K.H.³ Lin, J.Y.⁴ Jiang, H.X.⁵

16
- 0011792382
- (2000) Appl. Phys. Lett. , vol.77 , pp. 2668
- Zhang, J.P.¹ Yang, J.W.² Simin, G.³ Shatalov, M.⁴ Khan, M.A.⁵ Shur, M.S.⁶ Gaska, R.⁷

17
- 0001348454
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1161
- Khan, M.A.¹ Yang, J.W.² Simin, G.³ Gaska, R.⁴ Shur, M.⁵ Loye, H.Z.⁶ Tamulaitis, G.⁷ Zukauskas, A.⁸ Smith, D.J.⁹ Chandrasekhar, D.¹⁰ Tassius, R.B.¹¹

18
- 0034831582
- (2001) J. Cryst. Growth , vol.223 , pp. 83
- Kamiyama, S.¹ Iwaya, M.² Hayashi, N.³ Takeuchi, T.⁴ Amano, H.⁵ Akasaki, I.⁶ Watanabe, S.⁷ Kaneko, Y.⁸ Yamada, N.⁹

19
- 0035952878
- (2001) Appl. Phys. Lett. , vol.78 , pp. 1829
- Coli, G.¹ Bajaj, K.K.² Li, J.³ Lin, J.Y.⁴ Jiang, H.X.⁵

20
- 0032614090
- (1999) J. Appl. Phys. , vol.86 , pp. 3714
- Grandjean, N.¹ Damilano, B.² Dalmasso, S.³ Leroux, M.⁴ Laügt, M.⁵ Massies, J.⁶

21
- 16644367462
- (2000) Phys. Rev. B , vol.61 , pp. 2711
- Cingolani, R.¹ Botchkarev, A.² Tang, H.³ Morkoc, H.⁴ Traetta, G.⁵ Coli, G.⁶ Lomascolo, M.⁷ Di Carlo, A.⁸ Della Sala, F.⁹ Lugli, P.¹⁰

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