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Volumn 92, Issue 19, 2008, Pages

Influence of pulse width on electroluminescence and junction temperature of AlInGaN deep ultraviolet light-emitting diodes

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; PULSE WIDTH MODULATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

EID: 44049099045     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2931698     Document Type: Article
Times cited : (27)

References (10)
  • 1
    • 18844431908 scopus 로고    scopus 로고
    • JAPIAU 0021-8979 10.1063/1.1899760.
    • H. Hirayama, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1899760 97, 091101 (2005).
    • (2005) J. Appl. Phys. , vol.97 , pp. 091101
    • Hirayama, H.1
  • 5
    • 0042099114 scopus 로고    scopus 로고
    • (Cambridge University Press, Cambridge, U.K.).
    • E. F. Schubert, Light Emitting Diodes (Cambridge University Press, Cambridge, U.K., 2006).
    • (2006) Light Emitting Diodes
    • Schubert, E.F.1
  • 6
    • 33751097532 scopus 로고    scopus 로고
    • PSISDG 0277-786X 10.1117/12.680531.
    • Y. Gu, N. Narendran, T. Dong, and H. Wu, Proc. SPIE PSISDG 0277-786X 10.1117/12.680531 6337, 63370J (2006).
    • (2006) Proc. SPIE , vol.6337
    • Gu, Y.1    Narendran, N.2    Dong, T.3    Wu, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.