InGaN/GaN nanopillar-array light emitting diodes

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 5, 2007, Pages 1605-1608

  Neufeld, C J ^a   Schaake, C ^a   Grundmann, M ^a   Fichtenbaum, N A ^a   Keller, S ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOUND SEMICONDUCTORS; CONTACT LAYERS; CURRENT MEASUREMENTS; CURRENT-VOLTAGE; GAN LIGHT-EMITTING DIODES; GAN TEMPLATES; INGAN HETEROSTRUCTURES; INGAN QUANTUM WELLS; INGAN/GAN; INTERNATIONAL SYMPOSIUM; LASER INTERFERENCE LITHOGRAPHY; LATERAL GROWTH; NANO PILLARS; OUTPUT POWERS; P-TYPE GAN; RECTIFYING BEHAVIORS; TURN-ON VOLTAGES;

ANNEALING; ARSENIC COMPOUNDS; CHLORINE COMPOUNDS; CRYSTALS; DISTILLATION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT MEASUREMENT; ELECTROLUMINESCENCE; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT SOURCES; LITHOGRAPHY; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL DESIGN; QUANTUM WELL LASERS; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; STANDARDS;

LIGHT EMITTING DIODES;

EID: 49549094958     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674292     Document Type: Conference Paper

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