Effect of inductively coupled plasma damage on performance of GaN-InGaN multiquantum-well light-emitting diodes

Applied Physics Letters

Volumn 86, Issue 10, 2005, Pages 1-3

  Yang, Hyuck Soo ^a   Han, Sang Youn ^a   Baik, K H ^a   Pearton, S J ^a   Ren, F ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION WAVELENGTHS; ION ENERGY; PLASMA DAMAGE; SURFACE LEAKAGE;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; LIGHT EMISSION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TRANSPORT PROPERTIES;

LIGHT EMITTING DIODES;

EID: 17944364358     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1882749     Document Type: Article

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