Low-damage etched/regrown interface of strain-compensated GaInAsP/InP quantum-wire laser fabricated by CH4/H2 dry etching and regrowth

Applied Physics Letters

Volumn 81, Issue 6, 2002, Pages 966-968

  Yagi, Hideki ^a   Muranushi, Kengo ^a   Nunoya, Nobuhiro ^a   Sano, Takuya ^a   Tamura, Shigeo ^a   Arai, Shigehisa ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; GAINASP/INP; QUANTUM WIRE LASERS; ROOM TEMPERATURE; STRAIN-COMPENSATED; SURFACE RECOMBINATION VELOCITIES; WIRE WIDTH;

CARRIER LIFETIME; ORGANOMETALLICS; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WIRES; SPONTANEOUS EMISSION; WIRE;

QUANTUM EFFICIENCY;

EID: 79956048539     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1497995     Document Type: Article

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