Reducing contact resistance in graphene devices through contact area patterning

ACS Nano

Volumn 7, Issue 4, 2013, Pages 3661-3667

  Smith, Joshua T ^a   Franklin, Aaron D ^a   Farmer, Damon B ^a   Dimitrakopoulos, Christos D ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

contact; contact patterning; graphene transistor; resistance

Indexed keywords

CARRIER INJECTION; FABRICATED DEVICE; GRAPHENE DEVICES; GRAPHENE SHEETS; GRAPHENE TRANSISTORS; PROCESSING STEPS; SIMPLE APPROACH; TWO-TERMINAL DEVICES;

CONTACT RESISTANCE; CONTACTS (FLUID MECHANICS); ELECTRIC RESISTANCE;

GRAPHENE;

GRAPHITE; NANOMATERIAL;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; ELECTRODE; EQUIPMENT DESIGN; EQUIPMENT FAILURE; METHODOLOGY; MOLECULAR IMPRINTING; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

ELECTRIC CONDUCTIVITY; ELECTRODES; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GRAPHITE; MOLECULAR IMPRINTING; NANOSTRUCTURES; PARTICLE SIZE; TRANSISTORS, ELECTRONIC;

EID: 84876563699     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn400671z     Document Type: Article

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