Rapid thermal annealing of graphene-metal contact

Applied Physics Letters

Volumn 101, Issue 24, 2012, Pages

  Balci, Osman ^a   Kocabas, Coskun ^a  

^a BILKENT UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE OPERATIONS; DEVICE-SCALING; HIGH QUALITY; POSTPROCESSING METHODS; PROCESS-RELATED FACTORS; SYSTEMATIC INVESTIGATIONS;

CONTACT RESISTANCE; GRAPHENE; METALS;

RAPID THERMAL ANNEALING;

EID: 84871307235     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4769817     Document Type: Article

References (24)

1. H. B. Harrison, S. S. Iyer, G. A. Saihalasz, and S. A. Cohen, Appl. Phys. Lett. 51 (13), 992 (1987). 10.1063/1.98786
2. Z. Xie and S. P. Murarka, J. Electrochem. Soc. 134 (6), C265 (1987).
3. T. A. Frewen and T. Sinno, Appl. Phys. Lett. 89 (19), 191903 (2006). 10.1063/1.2385069
4. M. Simardnormandin, IEEE Trans. Electron Devices 32 (7), 1354 (1985). 10.1109/T-ED.1985.22124
5. A. Hsu, H. Wang, K. K. Kim, J. Kong, and T. Palacios, IEEE Electron Device Lett. 32 (8), 1008 (2011). 10.1109/LED.2011.2155024
6. K. N. Parrish and D. Akinwande, Appl. Phys. Lett. 98 (18), 183505 (2011). 10.1063/1.3582613
7. F. N. Xia, V. Perebeinos, Y. M. Lin, Y. Q. Wu, and P. Avouris, Nature Nanotechnol. 6 (3), 179 (2011). 10.1038/nnano.2011.6
8. J. A. Robinson, M. LaBella, M. Zhu, M. Hollander, R. Kasarda, Z. Hughes, K. Trumbull, R. Cavalero, and D. Snyder, Appl. Phys. Lett. 98 (5), 053103 (2011); 10.1063/1.3549183
9. T. Mueller, F. Xia, M. Freitag, J. Tsang, and P. Avouris, Phys. Rev. B 79 (24), 245430 (2009); 10.1103/PhysRevB.79.245430
10. J. Knoch, Z. H. Chen, and J. Appenzeller, IEEE Trans. Nanotechnol. 11 (3), 513 (2012). 10.1109/TNANO.2011.2178611
11. Y. Q. Wu, Y. M. Lin, A. A. Bol, K. A. Jenkins, F. N. Xia, D. B. Farmer, Y. Zhu, and P. Avouris, Nature 472 (7341), 74 (2011); 10.1038/nature09979
12. Y. M. Lin, A. Valdes-Garcia, S. J. Han, D. B. Farmer, I. Meric, Y. N. Sun, Y. Q. Wu, C. Dimitrakopoulos, A. Grill, P. Avouris, and K. A. Jenkins, Science 332 (6035), 1294 (2011); 10.1126/science.1204428
13. E. Pince and C. Kocabas, Appl. Phys. Lett. 97 (17), 173106 (2010); 10.1063/1.3506506
14. C. Kocabas, H. S. Kim, T. Banks, J. A. Rogers, A. A. Pesetski, J. E. Baumgardner, S. V. Krishnaswamy, and H. Zhang, Proc. Natl. Acad. Sci. U.S.A. 105 (5), 1405 (2008). 10.1073/pnas.0709734105
15. S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, 1995).
16. K. Nagashio and A. Toriumi, Jpn. J. Appl. Phys., Part 1 50 (7), 070108 (2011). 10.1143/JJAP.50.070108
17. A. W. Tsen, L. Brown, M. P. Levendorf, F. Ghahari, P. Y. Huang, R. W. Havener, C. S. Ruiz-Vargas, D. A. Muller, P. Kim, and J. Park, Science 336 (6085), 1143 (2012). 10.1126/science.1218948
18. A. D. Franklin, S. J. Han, A. A. Bol, and V. Perebeinos, IEEE Electron Device Lett. 33 (1), 17 (2012). 10.1109/LED.2011.2173154
19. E. Watanabe, A. Conwill, D. Tsuya, and Y. Koide, Diamond Relat. Mater. 24, 171 (2012). 10.1016/j.diamond.2012.01.019
20. S. M. Song, J. K. Park, O. J. Sul, and B. J. Cho, Nano Lett. 12, 3887-3892 (2012). 10.1021/nl300266p
21. O. Salihoglu, S. Balci, and C. Kocabas, Appl. Phys. Lett. 100 (21), 213110 (2012). 10.1063/1.4721453
22. X. N. Ho, L. N. Ye, S. V. Rotkin, Q. Cao, S. Unarunotai, S. Salamat, M. A. Alam, and J. A. Rogers, Nano Lett. 10 (2), 499 (2010). 10.1021/nl903281v
23. H. T. Xu, S. Wang, Z. Y. Zhang, Z. X. Wang, H. L. Xu, and L. M. Peng, Appl. Phys. Lett. 100 (10), 103501 (2012); 10.1063/1.3691629
24. G. Giovannetti, P. A. Khomyakov, G. Brocks, V. M. Karpan, J. van den Brink, and P. J. Kelly, Phys. Rev. Lett. 101 (2), 026803 (2008). 10.1103/PhysRevLett.101.026803