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Volumn 98, Issue 22, 2011, Pages

Effect of SiC wafer miscut angle on the morphology and Hall mobility of epitaxially grown graphene

(6) Dimitrakopoulos, Christos a Grill, Alfred a McArdle, Timothy J a Liu, Zihong a Wisnieff, Robert a Antoniadis, Dimitri A b

a IBM T J WATSON RESEARCH CENTER (United States)

b Department of Electrical Engineering and Computer Science (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIALLY GROWN; GROWTH PROCESS; MEAN FREE PATH; MISCUT ANGLE; ROOM TEMPERATURE;

CARRIER MOBILITY; CRYSTALLOGRAPHY; ELECTRIC PROPERTIES; GRAPHENE; HALL MOBILITY; LANDFORMS; MORPHOLOGY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

GALVANOMAGNETIC EFFECTS;

EID: 79958862767 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3595945 Document Type: Article

Times cited : (41)

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