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Volumn 79, Issue 7, 2009, Pages

Contact resistance and shot noise in graphene transistors

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Indexed keywords


EID: 61949103831     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.075428     Document Type: Article
Times cited : (110)

References (37)
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    • In the whole paper, we take the formal limit W/L→ and express the results in terms of conductance per channel, with W and L being, respectively, as the width (along y) and the length (along x) of the graphene strip. In practice, this corresponds to samples with aspect ratio W/L 4 according to Ref..
    • In the whole paper, we take the formal limit W/L→ and express the results in terms of conductance per channel, with W and L being, respectively, as the width (along y) and the length (along x) of the graphene strip. In practice, this corresponds to samples with aspect ratio W/L 4 according to Ref..
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    • Ph.D. thesis, Université de Paris 6
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.