Substrate gating of contact resistance in graphene transistors

IEEE Transactions on Electron Devices

Volumn 58, Issue 11, 2011, Pages 3925-3932

  Berdebes, Dionisis ^a   Low, Tony ^b   Sui, Yang ^c   Appenzeller, Joerg ^a   Lundstrom, Mark S ^a  

^a PURDUE UNIVERSITY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c GE GLOBAL RESEARCH   (United States)

Author keywords

Contacts; graphene transistor; Landauer; nonequilibrium Green's function (NEGF); quantum transport

Indexed keywords

BOTTOM GATE; DIELECTRIC LAYER; ELECTRON HOLE; GRAPHENE TRANSISTOR; GRAPHENE TRANSISTORS; LANDAUER; METAL CONTACTS; NON-EQUILIBRIUM GREEN'S FUNCTION; QUANTUM TRANSPORT;

CONTACT RESISTANCE; GREEN'S FUNCTION; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS;

GRAPHENE;

EID: 80054903454     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2163800     Document Type: Article

References (39)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, "Electric field effect in atomically thin carbon films", Science, vol. 306, no. 5696, pp. 666-669, Oct. 2004. (Pubitemid 39440910)
2. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. J. M. I. Katsnelson, I. V. Grigorieva, S. Dubonos, and A. A. Firsov, "Two-dimensional gas of massless Dirac fermions in graphene", Nature, vol. 438, no. 7065, pp. 197-200, Nov. 2005. (Pubitemid 41599867)
3. Y. B. Zhang, Y. W. Tan, H. L. Stormer, and P. Kim, "Experimental observation of the quantum hall effect and Berry's phase in graphene", Nature, vol. 438, no. 7065, pp. 201-204, Nov. 2005. (Pubitemid 41599868)
4. A. K. Geim and K. S. Novoselov, "The rise of graphene", Nat. Mater., vol. 6, no. 3, pp. 183-191, Mar. 2007. (Pubitemid 46353764)
5. A. H. C. Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, "The electronic properties of graphene", Rev. Mod. Phys., vol. 81, no. 1, pp. 109-162, Jan. 2009.
6. P. Avouris, "Graphene: Electronic and photonic properties and devices", Nano Lett., vol. 10, no. 11, pp. 4285-4294, Sep. 2010.
7. F. Schwierz, "Graphene transistors", Nat. Nanotechnol., vol. 5, no. 7, pp. 487-496, Jul. 2010.
8. Y. M. Lin, C. Dimitrakopoulos, K. A. Jenkins, D. B. Farmer, H. Y. Chiu, A. Grill, and P. Avouris, "100 ghz transistors from wafer scale epitaxial graphene", Science, vol. 327, no. 5966, p. 662, Feb. 2010.
9. F. Schedin, A. K. Geim, S. V. Morozov, E. W. Hill, P. Blake, M. I. Katsnelson, and K. S. Novoselov, "Detection of individual gas molecules adsorbed on graphene", Nat. Mater., vol. 6, no. 9, pp. 652-655, Sep. 2007. (Pubitemid 47359547)
10. K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J.-H. Ahn, P. Kim, J.-Y. Cho, and B. H. Hong, "Large scale pattern growth of graphene films for stretchable transparent electrodes", Nature, vol. 457, no. 7230, pp. 706-710, Feb. 2009.
11. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, 2010.
12. Z. Chen and J. Appenzeller, "Gate modulation of graphene contacts on the scaling of graphene fets", in VLSI Symp. Tech. Dig., 2009, pp. 128-129.
13. 3 dielectric", Appl. Phys. Lett., vol. 94, no. 6, pp. 062107-1-062107-3, Feb. 2009.
14. G. Giovannetti, P. A. Khomyakov, G. Brocks, V. M. Karpan, J. van den Brink, and P. J. Kelly, "Doping graphene with metal contacts", Phys. Rev. Lett., vol. 101, no. 2, p. 026803, Jul. 2008.
15. Y. Yu, Y. Zhao, S. Ryu, L. Brus, K. Kim, and P. Kim, "Tuning the graphene work function by electric field effect", Nano Lett., vol. 9, no. 10, pp. 3430-3434, Oct. 2009.
16. B. Huard, N. Stander, and D. Goldhaber-Gordon, "Evidence of the role of contacts on the observed electron-hole asymmetry in graphene", Phys. Rev. B, vol. 78, no. 12, p. 121402, Sep. 2008.
17. J. Cayssol, B. Huard, and D. Goldhaber-Gordon, "Contact resistance and shot noise in graphene transistors", Rhys. Rev. B, vol. 79, no. 7, p. 075428, Feb. 2009.
18. M. Vanin, J. J. Mortensen, A. K. Kelkkanen, J. M. Garcia-Lastra, K. S. Thygesen, and K. W. Jacobsen, "Graphene on metals: A van der waals density functional study", Phys. Rev. Lett., vol. 81, no. 8, p. 081408, Feb. 2010.
19. C. Gong, G. Lee, B. Shan, E. M. Vogel, R. M. Wallace, and K. Cho, "First principles study of metal-graphene interfaces", J. Appl. Phys., vol. 108, no. 12, pp. 123711-1-123711-8, Dec. 2010.
20. L. M. Zhang and M. M. Fogler, "Nonlinear screening and ballistic transport in a graphene p-n junction", Phys. Rev. Lett., vol. 100, no. 11, p. 116804, Mar. 2008.
21. T. Low, S. Hong, J. Appenzeller, S. Datta, and M. S. Lundstrom, "Conductance asymmetry of graphene p-n junction", IEEE Trans. Electron. Devices, vol. 56, no. 6, pp. 1292-1299, Jun. 2009.
22. B. Huard, J. A. Sulpizio, N. Stander, K. Todd, B. Yang, and D. Goldhaber-Gordon, "Transport measurements across a tunable potential barrier in graphene", Phys. Rev. Lett., vol. 98, no. 23, pp. 236803-1-236803-4, Jun. 2007.
23. D. W. Boukhvalov, M. I. Katsnelson, and A. I. Lichtenstein, "Hydrogen on graphene: Electronic structure, total energy, structural distortions and magnetism from first-principles calculations", Phys. Rev. B, vol. 77, no. 3, p. 035427, Jan. 2008.
24. 2", Nat. Nanotechnol., vol. 3, no. 4, pp. 206-209, Apr. 2008. (Pubitemid 351499398)
25. V. Perebeinos and P. Avouris, "Inelastic scattering and current saturation in graphene", Phys. Rev. B, vol. 81, no. 19, pp. 195442-1-195442-8, May 2010.
26. S. Adam, E. H. Hwang, V. M. Galitski, and S. D. Sarma, "A self-consistent theory for graphene transport", Proc. Nat. Acad. Sci., vol. 104, no. 47, pp. 18392-18397, Nov. 2007. (Pubitemid 350210707)
27. A. J. Leggett, "Macroscopic quantum systems and the quantum theory of measurement", Progr. Theor. Phys. Suppl., vol. 69, pp. 80-100, 1980.
28. Y. T. Hou, M. F. Li, Y. Jin, and W. H. Lai, "Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices", J. Appl. Phys., vol. 91, no. 1, pp. 258-264, Jan. 2002.
29. K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi, "Contact resistivity and current flow path at metal/graphene contact", Appl. Phys. Lett., vol. 97, no. 14, pp. 143514-1-143514-3, Oct. 2010.
30. P. Blake, R. Yang, S. Morozov, F. Schedin, L. Ponomarenko, A. Zhukov, R. Nair, I. Grigorieva, K. Novoselov, and A. Geim, "Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point", Solid State Commun., vol. 149, no. 27/28, pp. 1068-1071, Jul. 2009.
31. S. Russo, M. Craciun, M. Yamamoto, A. Morpurgo, and S. Tarucha, "Contact resistance in graphene-based devices", Phys. E, vol. 42, no. 4, pp. 677-679, Feb. 2010.
32. A. Venugopal, C. Colombo, and E. M. Vogel, "Contact resistance in few and multilayer graphene devices", Appl. Phys. Lett., vol. 96, no. 1, pp. 013512-1-013512-3, Jan. 2010.
33. W. J. Liu, M. F. Li, S. H. Xu, Q. Zhang, Y. H. Zhu, K. L. Pey, H. L. Hu, Z. X. Shen, X. Zou, J. L. Wang, J. Wei, H. L. Zhu, and H. Y. Yu, "Understanding the contact characteristics in single or multilayer graphene devices", in IEDM Tech. Dig., 2010, pp. 23.3.1-23.3.4.
34. F. Xia, V. Perebeinos, Y. Lin, Y. Wu, and Ph. Avouris, "The origins and limits of metal-graphene junctrion resistance", Nat. Nanotechnol., vol. 6, no. 3, pp. 179-184, Mar. 2011, DOI: 10.1038.
35. J. A. Robinson, M. LaBella, M. Zhou, M. Hollander, R. Kasarda, Z. Hughes, K. Trumbull, R. Cavalero, and D. Snyder, "Contacting graphene", Appl. Phys. Lett., vol. 98, no. 5, pp. 053103-1-053103-3, Jan. 2011.
36. S. Datta, Electronic Transport in Mesoscopic Systems. Cambridge, U. K.: Cambridge Univ. Press, 1995.
37. T. Mueller, F. Xia, M. Freitag, J. Tsang, and Ph. Avouris, "Role of contacts in graphene transistors: A scanning photocurrent study", Phys. Rev. B, vol. 79, no. 24, pp. 245430-1-245430-6, Jun. 2009.
38. L. Brey and H. A. Fertig, "Electronic states of graphene nanoribbons studied with the Dirac equation", Phys. Rev. B, vol. 73, no. 23, p. 235411, Jun. 2006.
39. V. V. Cheianov and V. I. Fal'ko, "Selective transmission of Dirac electrons and ballistic magnetoresistance of n-p junctions in graphene", Phys. Rev. B, vol. 74, no. 4, pp. 041403-1-041403-4, Jul. 2006.