Investigation of ballistic current in scaled floating-gate NAND FLASH and a solution

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Raghunathan, Shyam ^a   Krishnamohan, Tejas ^a,b   Parat, Krishna ^b   Saraswat, Krishna ^a  

^a Stanford University   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC CURRENT; BALLISTIC TRANSPORTS; CELL INTERFERENCE; FLOATING-GATES; FUNCTIONAL METALS; INTERPOLY DIELECTRICS; MEAN FREE PATH; NAND FLASH; POLY-SI; THREE ORDERS OF MAGNITUDE; ULTRA-THIN;

ELECTRON DEVICES; POLYSILICON;

BALLISTICS;

EID: 77952372931     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424216     Document Type: Conference Paper

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6. J. De Vos et.al., European Solid-State Device Research Conference (ESSDERC) 2008.
7. K. Reuter et al., Phys Rev B, Vol 61 Issue7,2000, pp. 4522-4525.