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Volumn 102, Issue 14, 2013, Pages

Formation process of conducting filament in planar organic resistive memory

Author keywords

[No Author keywords available]

Indexed keywords

CATION MOBILITY; CONDUCTING FILAMENT; FORMATION PROCESS; GROWTH MODES; ORGANIC LAYERS; ORGANIC RESISTIVE MEMORY; PLANAR DEVICES; POLY(STYRENE SULFONATE);

EID: 84876361912     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4802092     Document Type: Article
Times cited : (89)

References (31)
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    • 84876350680 scopus 로고    scopus 로고
    • See supplementary materials at E-APPLAB-102-067316 for plan-view SEM image of the planar device, I-V curves of a complete switching behavior, SEM images in Fig. shown on an expanded scale, I-t curves and SEM images of pristine devices under 0.5 V constant voltage, EDX analysis near the middle of the device in LRS, and a series of schematics on the formation process of CFs
    • See supplementary materials at http://dx.doi.org/10.1063/1.4802092 E-APPLAB-102-067316 for plan-view SEM image of the planar device, I-V curves of a complete switching behavior, SEM images in Fig. shown on an expanded scale, I-t curves and SEM images of pristine devices under 0.5 V constant voltage, EDX analysis near the middle of the device in LRS, and a series of schematics on the formation process of CFs.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.