Spin transport in memristive devices

Applied Physics Letters

Volumn 100, Issue 4, 2012, Pages

  Jang, Hyuk Jae ^a,b   Kirillov, Oleg A ^a   Jurchescu, Oana D ^b   Richter, Curt A ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b WAKE FOREST UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODE GEOMETRIES; ELECTRON SPINS; EXTERNAL MAGNETIC FIELD; FUNDAMENTAL SWITCHING; MAGNETORESISTANCE MEASUREMENTS; MEMRISTIVE BEHAVIOR; METAL-OXIDE; METALLIC CONDUCTION; RESISTANCE RATIO; SPIN TRANSPORT;

COPPER; ELECTRIC RESISTANCE; MAGNETIC FIELDS; MAGNETIC MOMENTS; MEMRISTORS; METALLIC COMPOUNDS;

ELECTROSPINNING;

EID: 84856456269     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3679114     Document Type: Article

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