Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes

IEEE/OSA Journal of Display Technology

Volumn 9, Issue 4, 2013, Pages 212-225

  Zhao, Hongping ^a,b   Liu, Guangyu ^a   Zhang, Jing ^a   Arif, Ronald A ^a   Tansu, Nelson ^a  

^a Lehigh University   (United States)

^b Case Western Reserve University   (United States)

Author keywords

Current injection efficiency; efficiency droop; III nitride; InGaN QWs; internal quantum efficiency; light emitting diodes (LEDs)

Indexed keywords

CURRENT INJECTION EFFICIENCY; EFFICIENCY DROOPS; III-NITRIDE; INGAN QWS; INTERNAL QUANTUM EFFICIENCY;

ALUMINUM; CURRENT DENSITY; ENERGY GAP; GALLIUM NITRIDE; QUANTUM EFFICIENCY; QUANTUM WELL LASERS; QUENCHING; THERMIONIC EMISSION;

LIGHT EMITTING DIODES;

EID: 84875634930     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2013.2250252     Document Type: Article

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