Photoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures

Japanese Journal of Applied Physics

Volumn 51, Issue 3 PART 1, 2012, Pages

  Zhang, Liyang ^a,b   Cheng, Kai ^b   Liang, Hu ^b   Lieten, Ruben ^a,b   Leys, Maarten ^b   Borghs, Gustaaf ^a,b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BAND DIAGRAMS; BLUE SHIFT; HOLE WAVE FUNCTIONS; MULTIPLE QUANTUM-WELL STRUCTURES; PHOTOLUMINESCENCE MEASUREMENTS; POLARIZATION EFFECT; POLARIZATION FIELD;

ELECTRIC FIELDS; GALLIUM NITRIDE; PHOTOLUMINESCENCE; POLARIZATION; SEMICONDUCTOR DEVICE STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84863229752     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.030207     Document Type: Article

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