Optical and structural studies in InGaN quantum well structure laser diodes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2177-2183

  Chichibu, Shigefusa F ^a,b   Azuhata, Takashi ^c   Sugiyama, Mutsumi ^a   Kitamura, Toshio ^b,d   Ishida, Yuuki ^b   Okumura, Hajime ^b,d   Nakanishi, Hisayuki ^d   Sota, Takayuki ^e   Mukai, Takashi ^f  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c HIROSAKI UNIVERSITY   (Japan)

^d TOKYO UNIVERSITY OF SCIENCE   (Japan)

^e WASEDA UNIVERSITY   (Japan)

^f NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON EMISSION; ELECTRONIC DENSITY OF STATES; ENERGY GAP; EXCITONS; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION ANALYSIS;

BAND GAP BOWING; EXCITON LOCALIZATION; INDIUM GALLIUM NITRIDE; MULTIPLE QUANTUM WELL LASER DIODE WAFER; NANOMETER PROBE COMPOSITIONAL ANALYSIS; STOKES LIKE SHIFT;

SEMICONDUCTOR LASERS;

EID: 0035519480     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1418404     Document Type: Article

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