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Volumn 6, Issue 3, 2013, Pages

Performance comparison of InAs, InSb, and GaSb n-Channel nanowire metal-oxide-semiconductor field-effect transistors in the ballistic transport limit

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC PERFORMANCE; BALLISTIC TRANSPORTS; BAND STRUCTURE EFFECTS; DENSITY-OF-STATES; DEVICE PERFORMANCE; HIGH ELECTRON VELOCITY; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; PERFORMANCE COMPARISON;

EID: 84875505774     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.6.034301     Document Type: Article
Times cited : (9)

References (27)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.